Tyler Grassman
Ohio State University, OH·Materials Science·Early-career
Defects often decide how a material behaves, from steel girders to computer chips. In semiconductors, combining dissimilar materials can unlock better LEDs, lasers, solar cells, infrared sensors and fast transistors.
- Fields
Materials Science
Engineering
Physics
- Topics
III-V semiconductors
compound semiconductors
dislocations
- Grants
- 1 known grant, through May 2027
What they work on
- Test whether the harmful electronic defect levels at dislocations in III-V semiconductors come from specific atomic-scale structures in the dislocation core.
- Identify the elements and bonding configurations behind these defect levels using correlated optoelectronic and structural spectroscopy and microscopy, from the macroscale down to the atomic scale.
- Determine how alloy composition, bandgap and doping change dislocation structures and their electronic effects, using carefully controlled epitaxial growth of samples.
More about the research
But joining these materials creates defects whose atomic makeup is still largely unknown. Knowing which atoms are present and how they bond could help engineers avoid harmful defects, or even put them to use.
Why it matters
Knowing which atomic structures at dislocations harm III-V semiconductors could support defect-aware design of compound semiconductor materials and processes. This could help manufacturers of LEDs, lasers, solar cells, infrared sensors and high-power transistors, especially for devices that require combining dissimilar materials.
Known grants
From NIH and NSF research grants. Labs often have other funding we can't see.
Closest labs
Michael McGehee
University of Colorado Boulder, CO·Materials Science
Synthesize all-inorganic triple-halide perovskites with band gaps of 1.9–2.1 eV and map which compositions mix into a single stable phase, using X-ray diffraction and composition analysis.
Shubhra Pasayat
University of Wisconsin-Madison, WI·Engineering·Early-career
Develop porous semiconductor substrates that are mechanically flexible and reflective, to relieve strain in III-nitride ultraviolet LED layers and redefine their critical thickness limits.
Spyridon Pavlidis
North Carolina State University, NC·Engineering·Early-career
Extract impact ionization coefficients — the parameters governing avalanche breakdown — from avalanche photodiodes fabricated on native aluminum nitride substrates, to establish how large an electric field aluminum-rich AlGaN can support.
The school
Ohio State University: 71 labs on PI Pages, $1.6B a year on research, 882 research doctorates a year.
Reach out
A start for your email. Fill in the brackets.